Cappuccio ceramico a più strati del chip del tantalio del condensatore CI di C2012X7S2A224K085AE SMD0805
ferrite bead model
,multilayer ceramic chip capacitors
CONDENSATORI DI CHIP CERAMICI A PIÙ STRATI C2012X7S2A224K085AE
Descrizione
2,2 μF 2012 1,25 +0.25/-0.20 μF 2012 del ± 20% C2012X7R1V225M125AE 4,7 del ± 10% C2012X7R1V225K125AE 1,25 +0.25/-0.20 ± 20% C2012X7R1E475M125AE C2012X7R1C475M125AE 3216 del ± 10% C2012X7R1E475K125AE C2012X7R1C475K125AE 1,60 +0.30/-0.20 μF 3216 del ± 20% C3216X7R1V475M160AE 10 del ± 10% C3216X7R1V475K160AE 1,60 +0.30/-0.20 μF 3225 del ± 20% C3216X7R1E106M160AE 2,2 del ± 10% C3216X7R1E106K160AE 2,30 +0.30/-0.20 ± 20% C3225X7R2A225M230AE del ± 10% C3225X7R2A225K230AE
PARTE DELLE AZIONE
| DIODO US1M-E3/61T | 1800 | VISHAY |
| Ricerca 1206 470R 5% RC1206JR-07470RL | 5000 | YAGEO |
| TRANS. ZXMN10A09KTC | 250 | ZETEX |
| C.I LD1117S33CTR | 5000 | STM |
| TRIAC BTA16-800BW3G | 300 | SU |
| C.I TL074CN | 100 | TI |
| ULN2003AN | 50 | TI |
| C.I CD40106BE | 25 | TI |
| C.I L7805CD2T-TR | 1000 | St |
| Ricerca 750R 1% RC0805FR-07750RL |
5000 | YAGEO |
| TRASPORTO BCX71J | 3000 | |
| UDN2987LWTR-6-T | 300 | ALLEGGR |
| MC34063AP1 | 1500 | SU |
| A4988SETTR-T | 400 | ALLEGRO |
| SFH229FA | 19500 | OSRAM |
| SFH4301 | 19500 | OSRAM |
| LM2596SX-5 | 100 | NSC |
| ATMEGA32A-AU | 130 | ATMEL |
| ULN2803AFWG | 300 | TOSHIBA |
| MJD42C | 625 | SU |
| MJD41C | 120 | SU |
| 74HC595D | 400 | |
| ES3A-E3/57T | 56950 | VISHAY |
| IRFZ44N | 200 | IR |
| IRF3205 | 100 | IR |
| LM19CIZ/LFT4 | 100 | TI |
| MX25L512MC-12G | 500 | MXIC |
| SSS7N60B | 100 | FAIRCHILD |
| MX25L1605AM2C-15G | 50 | MXIC |
| IT8728F-EXA | 10 | ITE |
| 0453007.MR | 1000 | LITTELFUSE |
| RT8859MGQW | 100 | RICHTEK |
| 2SK2648-01 | 50 | FUJI |
| AT90S1200-12SC | 200 | ATMEL |
| BLM21BD102SN1D | 4000 | |
| BSS138LT1G | 3000 | SU |
| IRF7424TRPBF | 4000 | IR |
| C.I BD9701FP-E2 | 2000 | ROHM |
| CAPPUCCIO 1u X7R CL10B105KA8NNNC | 4000 | SAMSUNG |
| RXEF090 | 2000 | RAYCHEM |
| BLM21AG601SN1D | 8000 |

